NCE50NF600F Specs and Replacement

Type Designator: NCE50NF600F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220F

NCE50NF600F substitution

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NCE50NF600F datasheet

 ..1. Size:810K  ncepower
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NCE50NF600F

NCE50NF600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

 4.1. Size:793K  ncepower
nce50nf600k.pdf pdf_icon

NCE50NF600F

NCE50NF600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

 4.2. Size:787K  ncepower
nce50nf600i.pdf pdf_icon

NCE50NF600F

NCE50NF600I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

 4.3. Size:823K  ncepower
nce50nf600d.pdf pdf_icon

NCE50NF600F

NCE50NF600D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

Detailed specifications: NCE50NF330I, NCE50NF330K, NCE50NF520, NCE50NF520D, NCE50NF520F, NCE50NF520I, NCE50NF520K, NCE50NF600D, IRF530, NCE50NF600I, NCE50NF600K, NCE50NF600R, NCE5520Q, NCE55P15, NCE6003X, NCE6003XM, NCE6003XY

Keywords - NCE50NF600F MOSFET specs

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