NCE6020A Todos los transistores

 

NCE6020A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6020A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 61.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TO-220
 

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NCE6020A Datasheet (PDF)

 ..1. Size:688K  ncepower
 nce6020a.pdf pdf_icon

NCE6020A

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 0.1. Size:432K  ncepower
 nce6020ak.pdf pdf_icon

NCE6020A

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 0.2. Size:335K  ncepower
 nce6020ai.pdf pdf_icon

NCE6020A

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 0.3. Size:673K  ncepower
 nce6020al.pdf pdf_icon

NCE6020A

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

MOSTRAR MÁS

Otros transistores... NCE6003X , NCE6003XM , NCE6003XY , NCE6005AN , NCE6007S , NCE6009XS , NCE6010J , NCE6012CS , 10N65 , NCE6020AL , NCE6020AQ , NCE6025Q , NCE6030K , NCE603583 , NCE6042AG , NCE6045XAG , NCE6045XG .

History: PHT6N06T | HUFA75309T3ST | NCE6007S | NCEP072N10A | IXTT26N60P | IXTT24N50Q

 

 
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