All MOSFET. NCE6020A Datasheet

 

NCE6020A Datasheet and Replacement


   Type Designator: NCE6020A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 61.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO-220
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NCE6020A Datasheet (PDF)

 ..1. Size:688K  ncepower
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NCE6020A

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 0.1. Size:432K  ncepower
 nce6020ak.pdf pdf_icon

NCE6020A

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 0.2. Size:335K  ncepower
 nce6020ai.pdf pdf_icon

NCE6020A

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 0.3. Size:673K  ncepower
 nce6020al.pdf pdf_icon

NCE6020A

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

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