NCE6025Q Todos los transistores

 

NCE6025Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6025Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.1 nS
   Cossⓘ - Capacitancia de salida: 113 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: DFN3.3X3.3-8L
 

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NCE6025Q Datasheet (PDF)

 ..1. Size:612K  ncepower
 nce6025q.pdf pdf_icon

NCE6025Q

NCE6025Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6025Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =25ADS DR

 8.1. Size:432K  ncepower
 nce6020ak.pdf pdf_icon

NCE6025Q

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 8.2. Size:335K  ncepower
 nce6020ai.pdf pdf_icon

NCE6025Q

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 8.3. Size:673K  ncepower
 nce6020al.pdf pdf_icon

NCE6025Q

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

MOSTRAR MÁS

Otros transistores... NCE6005AN , NCE6007S , NCE6009XS , NCE6010J , NCE6012CS , NCE6020A , NCE6020AL , NCE6020AQ , 7N60 , NCE6030K , NCE603583 , NCE6042AG , NCE6045XAG , NCE6045XG , NCE6058 , NCE6058AK , NCE6058K .

History: AP50T10GH-HF | HGA098N10A | VBA3328

 

 
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