NCE6025Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE6025Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 5.1 nS
   Cossⓘ - Capacitancia de salida: 113 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: DFN3.3X3.3-8L

Búsqueda de reemplazo de MOSFET NCE6025Q

NCE6025Q Datasheet (PDF)

..1. Size:612K ncepower
nce6025q.pdf

NCE6025Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6025Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =25ADS DR

8.1. Size:432K ncepower
nce6020ak.pdf

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

8.2. Size:335K ncepower
nce6020ai.pdf

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

8.3. Size:673K ncepower
nce6020al.pdf

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

8.4. Size:688K ncepower
nce6020a.pdf

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

8.5. Size:711K ncepower
nce6020aq.pdf

NCE6020AQhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescription General Featureshe NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20ADS Dprovide excellent R with low gate charge. It can be used in a R

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