Справочник MOSFET. NCE6025Q

 

NCE6025Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE6025Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 39 nC
   trⓘ - Время нарастания: 5.1 ns
   Cossⓘ - Выходная емкость: 113 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: DFN3.3X3.3-8L

 Аналог (замена) для NCE6025Q

 

 

NCE6025Q Datasheet (PDF)

 ..1. Size:612K  ncepower
 nce6025q.pdf

NCE6025Q NCE6025Q

NCE6025Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6025Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =25ADS DR

 8.1. Size:432K  ncepower
 nce6020ak.pdf

NCE6025Q NCE6025Q

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 8.2. Size:335K  ncepower
 nce6020ai.pdf

NCE6025Q NCE6025Q

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 8.3. Size:673K  ncepower
 nce6020al.pdf

NCE6025Q NCE6025Q

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 8.4. Size:688K  ncepower
 nce6020a.pdf

NCE6025Q NCE6025Q

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 8.5. Size:711K  ncepower
 nce6020aq.pdf

NCE6025Q NCE6025Q

NCE6020AQhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescription General Featureshe NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20ADS Dprovide excellent R with low gate charge. It can be used in a R

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History: VEC2315

 

 
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