NCE603583 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE603583 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE603583

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.1 nS

Cossⓘ - Capacitancia de salida: 112 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO-252-4L

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NCE603583 datasheet

..1. Size:975K ncepower
nce603583.pdf pdf_icon

NCE603583 http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE603583 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =40A DS D R

8.1. Size:455K ncepower
nce6030k.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE6030K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

8.2. Size:403K ncepower
nce603s.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE603S N and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 6

8.3. Size:930K cn vbsemi
nce603s.pdf pdf_icon

NCE603S www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS =

Otros transistores... NCE6009XS, NCE6010J, NCE6012CS, NCE6020A, NCE6020AL, NCE6020AQ, NCE6025Q, NCE6030K, 20N50, NCE6042AG, NCE6045XAG, NCE6045XG, NCE6058, NCE6058AK, NCE6058K, NCE6065AG, NCE6065G

NCE603583 Todos los transistores