NCE6045XAG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE6045XAG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 181 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0092 Ohm

Encapsulados: DFN5X6-8L

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NCE6045XAG datasheet

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NCE6045XAG

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NCE6045XAG

http //www.ncepower.com NCE6045XG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045XG uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =60V,I =45A DS(ON) DS D be used in a wide variety of applications. R =7.4m (typical) @ V =10V DS(ON) GS R =11.4m (typical) @ V =4.5V Application DS(ON) GS

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NCE6045XAG

Pb Free Product http //www.ncepower.com NCE6045G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =45A RDS(ON)

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 nce6042ag.pdf pdf_icon

NCE6045XAG

NCE6042AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6042AG uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =42A Schematic diagram DS D R

MOSTRAR MÁS

Otros transistores... NCE6012CS, NCE6020A, NCE6020AL, NCE6020AQ, NCE6025Q, NCE6030K, NCE603583, NCE6042AG, IRF2807, NCE6045XG, NCE6058, NCE6058AK, NCE6058K, NCE6065AG, NCE6065G, NCE6080, NCE6080AI