NCE60H10K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60H10K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm

Encapsulados: TO-252

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NCE60H10K datasheet

 ..1. Size:617K  ncepower
 nce60h10k.pdf pdf_icon

NCE60H10K

http //www.ncepower.com NCE60H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. General Features V =60V,I =100A Schematic diagram DS D R

 6.1. Size:617K  ncepower
 nce60h10.pdf pdf_icon

NCE60H10K

http //www.ncepower.com NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R

 6.2. Size:607K  ncepower
 nce60h10d.pdf pdf_icon

NCE60H10K

http //www.ncepower.com NCE60H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R

 6.3. Size:388K  ncepower
 nce60h10f.pdf pdf_icon

NCE60H10K

Pb Free Product http //www.ncepower.com NCE60H10F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE6080, NCE6080AI, NCE6080AK, NCE6080AT, NCE6080ED, NCE6080EK, NCE60H10, NCE60H10D, IRLB3034, NCE60H15AT, NCE60H15T, NCE60H18, NCE60H28LL, NCE60H30T, NCE60N1K0D, NCE60N1K0F, NCE60N1K0I