All MOSFET. NCE60H10K Datasheet

 

NCE60H10K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60H10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO-252

 NCE60H10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60H10K Datasheet (PDF)

 ..1. Size:617K  ncepower
 nce60h10k.pdf

NCE60H10K NCE60H10K

http://www.ncepower.comNCE60H10KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =60V,I =100A Schematic diagramDS DR

 6.1. Size:617K  ncepower
 nce60h10.pdf

NCE60H10K NCE60H10K

http://www.ncepower.comNCE60H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 6.2. Size:607K  ncepower
 nce60h10d.pdf

NCE60H10K NCE60H10K

http://www.ncepower.comNCE60H10DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10D uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 6.3. Size:388K  ncepower
 nce60h10f.pdf

NCE60H10K NCE60H10K

Pb Free Producthttp://www.ncepower.com NCE60H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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