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NCE60H15AT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60H15AT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 220 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 150 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 152 nC
   Tiempo de subida (tr): 29 nS
   Conductancia de drenaje-sustrato (Cd): 634 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0031 Ohm
   Paquete / Cubierta: TO-247

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NCE60H15AT Datasheet (PDF)

 ..1. Size:657K  ncepower
nce60h15at.pdf

NCE60H15AT
NCE60H15AT

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 5.1. Size:351K  ncepower
nce60h15a.pdf

NCE60H15AT
NCE60H15AT

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 5.2. Size:340K  ncepower
nce60h15ad.pdf

NCE60H15AT
NCE60H15AT

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.1. Size:610K  ncepower
nce60h15t.pdf

NCE60H15AT
NCE60H15AT

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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