NCE60H15AT. Аналоги и основные параметры

Наименование производителя: NCE60H15AT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 220 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 29 ns

Cossⓘ - Выходная емкость: 634 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm

Тип корпуса: TO-247

Аналог (замена) для NCE60H15AT

- подборⓘ MOSFET транзистора по параметрам

 

NCE60H15AT даташит

 ..1. Size:657K  ncepower
 nce60h15at.pdf pdf_icon

NCE60H15AT

http //www.ncepower.com NCE60H15AT NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

 5.1. Size:351K  ncepower
 nce60h15a.pdf pdf_icon

NCE60H15AT

http //www.ncepower.com NCE60H15A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 5.2. Size:340K  ncepower
 nce60h15ad.pdf pdf_icon

NCE60H15AT

http //www.ncepower.com NCE60H15AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.1. Size:610K  ncepower
 nce60h15t.pdf pdf_icon

NCE60H15AT

http //www.ncepower.com NCE60H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

ПОКАЗАТЬ ЕЩЁ

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