NCE60H15T Todos los transistores

 

NCE60H15T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60H15T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 625 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: TO-247
 

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NCE60H15T Datasheet (PDF)

 ..1. Size:610K  ncepower
 nce60h15t.pdf pdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 6.1. Size:351K  ncepower
 nce60h15a.pdf pdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.2. Size:340K  ncepower
 nce60h15ad.pdf pdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.3. Size:657K  ncepower
 nce60h15at.pdf pdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

MOSTRAR MÁS

Otros transistores... NCE6080AK , NCE6080AT , NCE6080ED , NCE6080EK , NCE60H10 , NCE60H10D , NCE60H10K , NCE60H15AT , 8N60 , NCE60H18 , NCE60H28LL , NCE60H30T , NCE60N1K0D , NCE60N1K0F , NCE60N1K0I , NCE60N1K0K , NCE60N1K0R .

History: IRF6218PBF | NCE50NF600I | BUK9Y4R4-40E | MMIX1F360N15T2 | SIE836DF | 2N6917 | NCE65T360I

 

 
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