Справочник MOSFET. NCE60H15T

 

NCE60H15T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE60H15T
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 220 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.1 V
   Максимально допустимый постоянный ток стока |Id|: 150 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 184 nC
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 625 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0031 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для NCE60H15T

 

 

NCE60H15T Datasheet (PDF)

 ..1. Size:610K  ncepower
nce60h15t.pdf

NCE60H15T
NCE60H15T

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 6.1. Size:351K  ncepower
nce60h15a.pdf

NCE60H15T
NCE60H15T

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.2. Size:340K  ncepower
nce60h15ad.pdf

NCE60H15T
NCE60H15T

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.3. Size:657K  ncepower
nce60h15at.pdf

NCE60H15T
NCE60H15T

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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