Справочник MOSFET. NCE60H15T

 

NCE60H15T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60H15T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 625 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для NCE60H15T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60H15T Datasheet (PDF)

 ..1. Size:610K  ncepower
nce60h15t.pdfpdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 6.1. Size:351K  ncepower
nce60h15a.pdfpdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.2. Size:340K  ncepower
nce60h15ad.pdfpdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 6.3. Size:657K  ncepower
nce60h15at.pdfpdf_icon

NCE60H15T

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

Другие MOSFET... NCE6080AK , NCE6080AT , NCE6080ED , NCE6080EK , NCE60H10 , NCE60H10D , NCE60H10K , NCE60H15AT , 8N60 , NCE60H18 , NCE60H28LL , NCE60H30T , NCE60N1K0D , NCE60N1K0F , NCE60N1K0I , NCE60N1K0K , NCE60N1K0R .

History: NTB18N06G | IRF034 | BUK9K35-60E

 

 
Back to Top

 


 
.