NCE60H30T Todos los transistores

 ..1. Size:655K  ncepower
 nce60h30t.pdf

http //www.ncepower.com NCE60H30T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H30T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =300A DS D R

 8.1. Size:617K  ncepower
 nce60h10k.pdf

http //www.ncepower.com NCE60H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. General Features V =60V,I =100A Schematic diagram DS D R

 8.2. Size:351K  ncepower
 nce60h15a.pdf

http //www.ncepower.com NCE60H15A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 8.3. Size:340K  ncepower
 nce60h15ad.pdf

http //www.ncepower.com NCE60H15AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 8.4. Size:617K  ncepower
 nce60h10.pdf

http //www.ncepower.com NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R

 8.5. Size:607K  ncepower
 nce60h10d.pdf

http //www.ncepower.com NCE60H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R

 8.6. Size:657K  ncepower
 nce60h15at.pdf

http //www.ncepower.com NCE60H15AT NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

 8.7. Size:388K  ncepower
 nce60h10f.pdf

Pb Free Product http //www.ncepower.com NCE60H10F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

 8.8. Size:638K  ncepower
 nce60h18.pdf

http //www.ncepower.com NCE60H18 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H18 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =180A DS D R

 8.9. Size:610K  ncepower
 nce60h15t.pdf

http //www.ncepower.com NCE60H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

 8.10. Size:580K  ncepower
 nce60h28ll.pdf

http //www.ncepower.com NCE60H28LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE60H28LL uses advanced trench technology and V =60V ,I =280A DS D design to provide excellent R with low gate charge. It R