All MOSFET. NCE60H30T Datasheet

 

NCE60H30T MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60H30T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 300 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 360 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 1255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: TO-247

 NCE60H30T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60H30T Datasheet (PDF)

 ..1. Size:655K  ncepower
nce60h30t.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.com NCE60H30TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H30T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =300ADS DR

 8.1. Size:617K  ncepower
nce60h10k.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.comNCE60H10KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =60V,I =100A Schematic diagramDS DR

 8.2. Size:351K  ncepower
nce60h15a.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 8.3. Size:340K  ncepower
nce60h15ad.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 8.4. Size:617K  ncepower
nce60h10.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.comNCE60H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 8.5. Size:607K  ncepower
nce60h10d.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.comNCE60H10DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10D uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 8.6. Size:657K  ncepower
nce60h15at.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 8.7. Size:388K  ncepower
nce60h10f.pdf

NCE60H30T
NCE60H30T

Pb Free Producthttp://www.ncepower.com NCE60H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

 8.8. Size:638K  ncepower
nce60h18.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.comNCE60H18NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H18 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =180ADS DR

 8.9. Size:610K  ncepower
nce60h15t.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 8.10. Size:580K  ncepower
nce60h28ll.pdf

NCE60H30T
NCE60H30T

http://www.ncepower.com NCE60H28LLNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE60H28LL uses advanced trench technology and V =60V ,I =280ADS Ddesign to provide excellent R with low gate charge. It R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top