NCE60H30T
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE60H30T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 400
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 300
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 360
nC
trⓘ - Rise Time: 90
nS
Cossⓘ -
Output Capacitance: 1255
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021
Ohm
Package:
TO-247
NCE60H30T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE60H30T
Datasheet (PDF)
..1. Size:655K ncepower
nce60h30t.pdf 
http://www.ncepower.com NCE60H30TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H30T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =300ADS DR
8.1. Size:617K ncepower
nce60h10k.pdf
http://www.ncepower.comNCE60H10KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =60V,I =100A Schematic diagramDS DR
8.2. Size:351K ncepower
nce60h15a.pdf
http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)
8.3. Size:340K ncepower
nce60h15ad.pdf
http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)
8.4. Size:617K ncepower
nce60h10.pdf
http://www.ncepower.comNCE60H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =100ADS DR
8.5. Size:607K ncepower
nce60h10d.pdf
http://www.ncepower.comNCE60H10DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10D uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.Schematic diagramGeneral Features V =60V,I =100ADS DR
8.6. Size:657K ncepower
nce60h15at.pdf
http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR
8.7. Size:388K ncepower
nce60h10f.pdf
Pb Free Producthttp://www.ncepower.com NCE60H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)
8.8. Size:638K ncepower
nce60h18.pdf
http://www.ncepower.comNCE60H18NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H18 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =180ADS DR
8.9. Size:610K ncepower
nce60h15t.pdf
http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR
8.10. Size:580K ncepower
nce60h28ll.pdf
http://www.ncepower.com NCE60H28LLNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE60H28LL uses advanced trench technology and V =60V ,I =280ADS Ddesign to provide excellent R with low gate charge. It R
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