NCE60N390 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60N390
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 99 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 13 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET NCE60N390
NCE60N390 Datasheet (PDF)
nce60n390.pdf
NCE60N390N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industrial
nce60n390f.pdf
NCE60N390FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390i.pdf
NCE60N390IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390k.pdf
NCE60N390KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390d.pdf
NCE60N390DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918