All MOSFET. NCE60N390 Datasheet

 

NCE60N390 Datasheet and Replacement


   Type Designator: NCE60N390
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 99 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO-220
 

 NCE60N390 substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE60N390 Datasheet (PDF)

 ..1. Size:722K  ncepower
 nce60n390.pdf pdf_icon

NCE60N390

NCE60N390N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industrial

 0.1. Size:721K  ncepower
 nce60n390f.pdf pdf_icon

NCE60N390

NCE60N390FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

 0.2. Size:730K  ncepower
 nce60n390i.pdf pdf_icon

NCE60N390

NCE60N390IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

 0.3. Size:715K  ncepower
 nce60n390k.pdf pdf_icon

NCE60N390

NCE60N390KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria

SHOW MORE

Datasheet: NCE60N1K0K , NCE60N1K0R , NCE60N2K1D , NCE60N2K1F , NCE60N2K1I , NCE60N2K1K , NCE60N2K1R , NCE60N370K , IRF840 , NCE60N390D , NCE60N390F , NCE60N390I , NCE60N390K , NCE60N640 , NCE60N640D , NCE60N640F , NCE60N640I .

History: SUP75P05-08 | CS9N90F | IRFY440CM | UT50N03 | UTT24N06G-TN3-R | NTMFS5C410NL | P0950ETFS

Keywords - NCE60N390 MOSFET datasheet

 NCE60N390 cross reference
 NCE60N390 equivalent finder
 NCE60N390 lookup
 NCE60N390 substitution
 NCE60N390 replacement

 

 
Back to Top

 


 
.