NCE60N390K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60N390K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 99 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 32 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm

Encapsulados: TO-252

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NCE60N390K datasheet

 ..1. Size:715K  ncepower
 nce60n390k.pdf pdf_icon

NCE60N390K

NCE60N390K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 5.1. Size:721K  ncepower
 nce60n390f.pdf pdf_icon

NCE60N390K

NCE60N390F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 5.2. Size:730K  ncepower
 nce60n390i.pdf pdf_icon

NCE60N390K

NCE60N390I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 5.3. Size:722K  ncepower
 nce60n390.pdf pdf_icon

NCE60N390K

NCE60N390 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industrial

MOSTRAR MÁS

Otros transistores... NCE60N2K1I, NCE60N2K1K, NCE60N2K1R, NCE60N370K, NCE60N390, NCE60N390D, NCE60N390F, NCE60N390I, 50N06, NCE60N640, NCE60N640D, NCE60N640F, NCE60N640I, NCE60N640K, NCE60N670F, NCE60N670K, NCE60N700D