NCE60N390K MOSFET Datasheet: N-Ch, 600V, 10A. Full specification with pinout and replacement list

NCE60N390K Specs and Replacement

   Type Designator: NCE60N390K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 99 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO-252

NCE60N390K substitution

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NCE60N390K datasheet

..1. Size:715K ncepower
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NCE60N390K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria... See More ⇒

5.1. Size:721K ncepower
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NCE60N390F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria... See More ⇒

5.2. Size:730K ncepower
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NCE60N390I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria... See More ⇒

5.3. Size:722K ncepower
nce60n390.pdf pdf_icon

NCE60N390 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industrial... See More ⇒