NCE60N670F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60N670F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 21 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de NCE60N670F MOSFET
NCE60N670F Datasheet (PDF)
nce60n670f.pdf

NCE60N670FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr
nce60n670k.pdf

NCE60N670KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr
nce60n640f.pdf

NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus
nce60n640k.pdf

NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus
Otros transistores... NCE60N390F , NCE60N390I , NCE60N390K , NCE60N640 , NCE60N640D , NCE60N640F , NCE60N640I , NCE60N640K , IRF640N , NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K , NCE60N700R , NCE60ND03N , NCE60ND03S .
History: AOWF11N60 | 2SK135 | MTP9435BDYQ8 | PSMN2R8-40PS | TPD50R3K8D | AP9938GEY-HF | AP9975GM-HF
History: AOWF11N60 | 2SK135 | MTP9435BDYQ8 | PSMN2R8-40PS | TPD50R3K8D | AP9938GEY-HF | AP9975GM-HF



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