Справочник MOSFET. NCE60N670F

 

NCE60N670F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60N670F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 21 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.67 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для NCE60N670F

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60N670F Datasheet (PDF)

 ..1. Size:630K  ncepower
 nce60n670f.pdf pdf_icon

NCE60N670F

NCE60N670FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.1. Size:650K  ncepower
 nce60n670k.pdf pdf_icon

NCE60N670F

NCE60N670KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 7.1. Size:814K  ncepower
 nce60n640f.pdf pdf_icon

NCE60N670F

NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 7.2. Size:793K  ncepower
 nce60n640k.pdf pdf_icon

NCE60N670F

NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60N390F , NCE60N390I , NCE60N390K , NCE60N640 , NCE60N640D , NCE60N640F , NCE60N640I , NCE60N640K , IRF640N , NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K , NCE60N700R , NCE60ND03N , NCE60ND03S .

History: AP9435GG | 2301L | QM6007K | BL30N60-W | AP9938GEY-HF | CSN04N1P5 | FDN338

 

 
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