NCE60NF055D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60NF055D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 378 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 51 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 58 nC
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 155 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: T0-263
Búsqueda de reemplazo de MOSFET NCE60NF055D
NCE60NF055D Datasheet (PDF)
nce60nf055d.pdf
NCE60NF055DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria
nce60nf055.pdf
NCE60NF055N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industrial
nce60nf055t.pdf
NCE60NF055TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria
nce60nf055f.pdf
NCE60NF055FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918