NCE60NF055D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NF055D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 378 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 51 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: T0-263

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NCE60NF055D datasheet

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NCE60NF055D

NCE60NF055D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

 4.1. Size:747K  ncepower
 nce60nf055.pdf pdf_icon

NCE60NF055D

NCE60NF055 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industrial

 4.2. Size:872K  ncepower
 nce60nf055t.pdf pdf_icon

NCE60NF055D

NCE60NF055T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

 4.3. Size:807K  ncepower
 nce60nf055f.pdf pdf_icon

NCE60NF055D

NCE60NF055F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

MOSTRAR MÁS

Otros transistores... NCE60ND03S, NCE60ND08S, NCE60ND45AG, NCE60ND45XG, NCE60NF019T, NCE60NF031T, NCE60NF040T, NCE60NF055, AON7408, NCE60NF055F, NCE60NF055T, NCE60NF080, NCE60NF080D, NCE60NF080F, NCE60NF080T, NCE60NF110, NCE60NF110F