NCE60NF055D. Аналоги и основные параметры

Наименование производителя: NCE60NF055D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 378 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 51 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

Cossⓘ - Выходная емкость: 155 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: T0-263

Аналог (замена) для NCE60NF055D

- подборⓘ MOSFET транзистора по параметрам

 

NCE60NF055D даташит

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NCE60NF055D

NCE60NF055D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

 4.1. Size:747K  ncepower
 nce60nf055.pdf pdf_icon

NCE60NF055D

NCE60NF055 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industrial

 4.2. Size:872K  ncepower
 nce60nf055t.pdf pdf_icon

NCE60NF055D

NCE60NF055T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

 4.3. Size:807K  ncepower
 nce60nf055f.pdf pdf_icon

NCE60NF055D

NCE60NF055F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

ПОКАЗАТЬ ЕЩЁ

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