NCE60NF080F Todos los transistores

 

NCE60NF080F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60NF080F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 41 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 123 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO-220F
 

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NCE60NF080F Datasheet (PDF)

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NCE60NF080F

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 4.1. Size:763K  ncepower
 nce60nf080.pdf pdf_icon

NCE60NF080F

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

 4.2. Size:887K  ncepower
 nce60nf080t.pdf pdf_icon

NCE60NF080F

NCE60NF080TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 4.3. Size:749K  ncepower
 nce60nf080d.pdf pdf_icon

NCE60NF080F

NCE60NF080DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

MOSTRAR MÁS

Otros transistores... NCE60NF031T , NCE60NF040T , NCE60NF055 , NCE60NF055D , NCE60NF055F , NCE60NF055T , NCE60NF080 , NCE60NF080D , IRF4905 , NCE60NF080T , NCE60NF110 , NCE60NF110F , NCE60NF160K , NCE60NF160T , NCE60NF160V , NCE60NF200 , NCE60NF200D .

History: HGN035N10AL | STD7N80K5

 

 
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