Справочник MOSFET. NCE60NF080F

 

NCE60NF080F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60NF080F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 41 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 123 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

NCE60NF080F Datasheet (PDF)

 ..1. Size:789K  ncepower
 nce60nf080f.pdf pdf_icon

NCE60NF080F

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 4.1. Size:763K  ncepower
 nce60nf080.pdf pdf_icon

NCE60NF080F

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

 4.2. Size:887K  ncepower
 nce60nf080t.pdf pdf_icon

NCE60NF080F

NCE60NF080TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 4.3. Size:749K  ncepower
 nce60nf080d.pdf pdf_icon

NCE60NF080F

NCE60NF080DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

ПОКАЗАТЬ ЕЩЁ

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History: SQ2361ES | PK5V8EN | TK3A60DA | UT60T03 | TMD7N65H | 4N65KL-T2Q-R

 

 
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