NCE60NF080T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NF080T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 351 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 41 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 123 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO-247

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NCE60NF080T datasheet

 ..1. Size:887K  ncepower
 nce60nf080t.pdf pdf_icon

NCE60NF080T

NCE60NF080T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria

 4.1. Size:789K  ncepower
 nce60nf080f.pdf pdf_icon

NCE60NF080T

NCE60NF080F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria

 4.2. Size:763K  ncepower
 nce60nf080.pdf pdf_icon

NCE60NF080T

NCE60NF080 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industrial

 4.3. Size:749K  ncepower
 nce60nf080d.pdf pdf_icon

NCE60NF080T

NCE60NF080D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria

MOSTRAR MÁS

Otros transistores... NCE60NF040T, NCE60NF055, NCE60NF055D, NCE60NF055F, NCE60NF055T, NCE60NF080, NCE60NF080D, NCE60NF080F, IRLB4132, NCE60NF110, NCE60NF110F, NCE60NF160K, NCE60NF160T, NCE60NF160V, NCE60NF200, NCE60NF200D, NCE60NF200F