All MOSFET. NCE60NF080T Datasheet

 

NCE60NF080T Datasheet and Replacement


   Type Designator: NCE60NF080T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 351 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-247
      - MOSFET Cross-Reference Search

 

NCE60NF080T Datasheet (PDF)

 ..1. Size:887K  ncepower
 nce60nf080t.pdf pdf_icon

NCE60NF080T

NCE60NF080TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 4.1. Size:789K  ncepower
 nce60nf080f.pdf pdf_icon

NCE60NF080T

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 4.2. Size:763K  ncepower
 nce60nf080.pdf pdf_icon

NCE60NF080T

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

 4.3. Size:749K  ncepower
 nce60nf080d.pdf pdf_icon

NCE60NF080T

NCE60NF080DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

SHOW MORE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FRL9230D | IRF441 | AP9926GEO | RW1C020UN | STD4N62K3 | BSS606N | GSM3050S

Keywords - NCE60NF080T MOSFET datasheet

 NCE60NF080T cross reference
 NCE60NF080T equivalent finder
 NCE60NF080T lookup
 NCE60NF080T substitution
 NCE60NF080T replacement

 

 
Back to Top

 


 
.