NCE60NF200D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NF200D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-263

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NCE60NF200D datasheet

 ..1. Size:716K  ncepower
 nce60nf200d.pdf pdf_icon

NCE60NF200D

NCE60NF200D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.1. Size:679K  ncepower
 nce60nf200i.pdf pdf_icon

NCE60NF200D

NCE60NF200I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.2. Size:686K  ncepower
 nce60nf200k.pdf pdf_icon

NCE60NF200D

NCE60NF200K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.3. Size:697K  ncepower
 nce60nf200f.pdf pdf_icon

NCE60NF200D

NCE60NF200F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

MOSTRAR MÁS

Otros transistores... NCE60NF080F, NCE60NF080T, NCE60NF110, NCE60NF110F, NCE60NF160K, NCE60NF160T, NCE60NF160V, NCE60NF200, K4145, NCE60NF200F, NCE60NF200I, NCE60NF200K, NCE60NF260, NCE60NF260D, NCE60NF260F, NCE60NF260I, NCE60NF260K