NCE60NF200D. Аналоги и основные параметры

Наименование производителя: NCE60NF200D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: TO-263

Аналог (замена) для NCE60NF200D

- подборⓘ MOSFET транзистора по параметрам

 

NCE60NF200D даташит

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 nce60nf200d.pdf pdf_icon

NCE60NF200D

NCE60NF200D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.1. Size:679K  ncepower
 nce60nf200i.pdf pdf_icon

NCE60NF200D

NCE60NF200I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.2. Size:686K  ncepower
 nce60nf200k.pdf pdf_icon

NCE60NF200D

NCE60NF200K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.3. Size:697K  ncepower
 nce60nf200f.pdf pdf_icon

NCE60NF200D

NCE60NF200F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

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Другие IGBT... NCE60NF080F, NCE60NF080T, NCE60NF110, NCE60NF110F, NCE60NF160K, NCE60NF160T, NCE60NF160V, NCE60NF200, K4145, NCE60NF200F, NCE60NF200I, NCE60NF200K, NCE60NF260, NCE60NF260D, NCE60NF260F, NCE60NF260I, NCE60NF260K