NCE60NF260D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NF260D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 128 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm

Encapsulados: TO263

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NCE60NF260D datasheet

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 nce60nf260d.pdf pdf_icon

NCE60NF260D

NCE60NF260D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

 4.1. Size:746K  ncepower
 nce60nf260f.pdf pdf_icon

NCE60NF260D

NCE60NF260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

 4.2. Size:704K  ncepower
 nce60nf260i.pdf pdf_icon

NCE60NF260D

NCE60NF260I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

 4.3. Size:712K  ncepower
 nce60nf260k.pdf pdf_icon

NCE60NF260D

NCE60NF260K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE60NF160T, NCE60NF160V, NCE60NF200, NCE60NF200D, NCE60NF200F, NCE60NF200I, NCE60NF200K, NCE60NF260, IRF1010E, NCE60NF260F, NCE60NF260I, NCE60NF260K, NCE60NF730D, NCE60NF730F, NCE60NF730I, NCE60NF730K, NCE60NF730R