All MOSFET. NCE60NF260D Datasheet

 

NCE60NF260D Datasheet and Replacement


   Type Designator: NCE60NF260D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 128 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO263
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NCE60NF260D Datasheet (PDF)

 ..1. Size:692K  ncepower
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NCE60NF260D

NCE60NF260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

 4.1. Size:746K  ncepower
 nce60nf260f.pdf pdf_icon

NCE60NF260D

NCE60NF260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

 4.2. Size:704K  ncepower
 nce60nf260i.pdf pdf_icon

NCE60NF260D

NCE60NF260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

 4.3. Size:712K  ncepower
 nce60nf260k.pdf pdf_icon

NCE60NF260D

NCE60NF260KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus

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History: 2SK2533

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