NCE60NF730R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60NF730R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 23 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de NCE60NF730R MOSFET
NCE60NF730R datasheet
nce60nf730r.pdf
NCE60NF730R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60nf730i.pdf
NCE60NF730I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60nf730k.pdf
NCE60NF730K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60nf730d.pdf
NCE60NF730D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
Otros transistores... NCE60NF260D , NCE60NF260F , NCE60NF260I , NCE60NF260K , NCE60NF730D , NCE60NF730F , NCE60NF730I , NCE60NF730K , IRFP450 , NCE60NP09S , NCE60NP1515K , NCE60NP2012K , NCE60NP2016G , NCE60NP4035K , NCE60P02Y , NCE60P03R , NCE60P03Y .
History: APG130N06T | APG60N10NF | SI7137DP
History: APG130N06T | APG60N10NF | SI7137DP
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