NCE60NF730R. Аналоги и основные параметры
Наименование производителя: NCE60NF730R
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 5.2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 23 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.73 Ohm
Тип корпуса: SOT223
Аналог (замена) для NCE60NF730R
- подборⓘ MOSFET транзистора по параметрам
NCE60NF730R даташит
nce60nf730r.pdf
NCE60NF730R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60nf730i.pdf
NCE60NF730I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60nf730k.pdf
NCE60NF730K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
nce60nf730d.pdf
NCE60NF730D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust
Другие IGBT... NCE60NF260D, NCE60NF260F, NCE60NF260I, NCE60NF260K, NCE60NF730D, NCE60NF730F, NCE60NF730I, NCE60NF730K, IRFP450, NCE60NP09S, NCE60NP1515K, NCE60NP2012K, NCE60NP2016G, NCE60NP4035K, NCE60P02Y, NCE60P03R, NCE60P03Y
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Список транзисторов
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