NCE60NP09S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60NP09S
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 25 nC
Tiempo de subida (tr): 3.4 nS
Conductancia de drenaje-sustrato (Cd): 65 pF
Resistencia entre drenaje y fuente RDS(on): 0.034 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET NCE60NP09S
NCE60NP09S Datasheet (PDF)
nce60np09s.pdf
NCE60NP09Shttp://www.ncepower.comNCE 60V Complementary MOSFETDescriptionThe NCE60NP09S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =9ADS DR
nce60np4035k.pdf
NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR
nce60np2012k.pdf
NCE60NP2012Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2012K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =20ADS DR
nce60np1515k.pdf
NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR
nce60np2016g.pdf
Pb Free Producthttp://www.ncepower.comNCE60NP2016GNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2016G uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =20ADS DR
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
