Справочник MOSFET. NCE60NP09S

 

NCE60NP09S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60NP09S
   Тип транзистора: MOSFET
   Полярность: NP
   Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.4 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для NCE60NP09S

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60NP09S Datasheet (PDF)

 ..1. Size:1011K  ncepower
 nce60np09s.pdf pdf_icon

NCE60NP09S

NCE60NP09Shttp://www.ncepower.comNCE 60V Complementary MOSFETDescriptionThe NCE60NP09S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =9ADS DR

 7.1. Size:978K  ncepower
 nce60np4035k.pdf pdf_icon

NCE60NP09S

NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR

 7.2. Size:913K  ncepower
 nce60np2012k.pdf pdf_icon

NCE60NP09S

NCE60NP2012Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2012K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =20ADS DR

 7.3. Size:854K  ncepower
 nce60np1515k.pdf pdf_icon

NCE60NP09S

NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60NF260F , NCE60NF260I , NCE60NF260K , NCE60NF730D , NCE60NF730F , NCE60NF730I , NCE60NF730K , NCE60NF730R , IRFZ24N , NCE60NP1515K , NCE60NP2012K , NCE60NP2016G , NCE60NP4035K , NCE60P02Y , NCE60P03R , NCE60P03Y , NCE60P04SN .

History: BSC014N04LSI | S85N042RP | CEM2539A | FDS8874

 

 
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