NCE60NP2016G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NP2016G

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 61.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: DFN5X6-8L

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NCE60NP2016G datasheet

 ..1. Size:993K  ncepower
nce60np2016g.pdf pdf_icon

NCE60NP2016G

Pb Free Product http //www.ncepower.com NCE60NP2016G NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2016G uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =20A DS D R

 4.1. Size:913K  ncepower
nce60np2012k.pdf pdf_icon

NCE60NP2016G

NCE60NP2012K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =20A DS D R

 7.1. Size:978K  ncepower
nce60np4035k.pdf pdf_icon

NCE60NP2016G

NCE60NP4035K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP4035K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =40A DS D R

 7.2. Size:854K  ncepower
nce60np1515k.pdf pdf_icon

NCE60NP2016G

NCE60NP1515K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =15A DS D R

Otros transistores... NCE60NF730D, NCE60NF730F, NCE60NF730I, NCE60NF730K, NCE60NF730R, NCE60NP09S, NCE60NP1515K, NCE60NP2012K, 4N60, NCE60NP4035K, NCE60P02Y, NCE60P03R, NCE60P03Y, NCE60P04SN, NCE60P05BY, NCE60P05N, NCE60P05R