NCE60NP2016G. Аналоги и основные параметры

Наименование производителя: NCE60NP2016G

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 42 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 61.2 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCE60NP2016G

- подборⓘ MOSFET транзистора по параметрам

 

NCE60NP2016G даташит

 ..1. Size:993K  ncepower
 nce60np2016g.pdf pdf_icon

NCE60NP2016G

Pb Free Product http //www.ncepower.com NCE60NP2016G NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2016G uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =20A DS D R

 4.1. Size:913K  ncepower
 nce60np2012k.pdf pdf_icon

NCE60NP2016G

NCE60NP2012K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =20A DS D R

 7.1. Size:978K  ncepower
 nce60np4035k.pdf pdf_icon

NCE60NP2016G

NCE60NP4035K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP4035K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =40A DS D R

 7.2. Size:854K  ncepower
 nce60np1515k.pdf pdf_icon

NCE60NP2016G

NCE60NP1515K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =15A DS D R

ПОКАЗАТЬ ЕЩЁ

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