NCE60P02Y Todos los transistores

 

NCE60P02Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P02Y
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 27.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: SOT-23
 

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NCE60P02Y Datasheet (PDF)

 ..1. Size:408K  ncepower
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NCE60P02Y

NCE60P02Yhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P02Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-2A RDS(ON)

 7.1. Size:411K  ncepower
nce60p05n.pdf pdf_icon

NCE60P02Y

http://www.ncepower.com NCE60P05NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)

 7.2. Size:364K  ncepower
nce60p06s.pdf pdf_icon

NCE60P02Y

http://www.ncepower.com NCE60P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON)

 7.3. Size:285K  ncepower
nce60p09s.pdf pdf_icon

NCE60P02Y

NCE60P09Shttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

Otros transistores... NCE60NF730I , NCE60NF730K , NCE60NF730R , NCE60NP09S , NCE60NP1515K , NCE60NP2012K , NCE60NP2016G , NCE60NP4035K , P0903BDG , NCE60P03R , NCE60P03Y , NCE60P04SN , NCE60P05BY , NCE60P05N , NCE60P05R , NCE60P07AS , NCE60P08AS .

History: CS2N50DU | S60N18RN | KP746B1

 

 
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