NCE60P02Y Specs and Replacement

Type Designator: NCE60P02Y

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 27.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT-23

NCE60P02Y substitution

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NCE60P02Y datasheet

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NCE60P02Y

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NCE60P02Y

http //www.ncepower.com NCE60P05N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON) ... See More ⇒

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NCE60P02Y

http //www.ncepower.com NCE60P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON) ... See More ⇒

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NCE60P02Y

NCE60P09S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON) ... See More ⇒

Detailed specifications: NCE60NF730I, NCE60NF730K, NCE60NF730R, NCE60NP09S, NCE60NP1515K, NCE60NP2012K, NCE60NP2016G, NCE60NP4035K, IRF1407, NCE60P03R, NCE60P03Y, NCE60P04SN, NCE60P05BY, NCE60P05N, NCE60P05R, NCE60P07AS, NCE60P08AS

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs