NCE60P09AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60P09AS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 36.5 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 124.3 pF
Resistencia entre drenaje y fuente RDS(on): 0.05 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET NCE60P09AS
NCE60P09AS Datasheet (PDF)
nce60p09as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE60P09AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)
nce60p09s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE60P09Shttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)
nce60p09k.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCE60P09KNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V =-60V,I =-9ADS DThe NCE60P09K uses advanced trench technology and designR
nce60p02y.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE60P02Yhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P02Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-2A RDS(ON)
nce60p05n.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCE60P05NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)
nce60p06s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCE60P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON)
nce60p05by.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE60P05BYhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)
nce60p08as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCE60P08ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P08AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-8A RDS(ON)
nce60p03r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCE60P03RNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P03R uses advanced trench technology and design V =-60V,I =-3ADS Dto provide excellent R with low gate charge .This device isDS(ON)R
nce60p04sn.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE60P04SN http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-4A RDS(ON)
nce60p05r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCE60P05RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-5A Schematic diagram RDS(ON)
nce60p07as.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE60P07AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-7A Schematic diagram RDS(ON)
nce60p04y.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free Producthttp://www.ncepower.com NCE60P04YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4A RDS(ON)
nce60p03y.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NCE60P03YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-3A RDS(ON)
nce60p04r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free Producthttp://www.ncepower.com NCE60P04RNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-4.3A Schematic diagram RDS(ON)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![NCE60P09AS](https://alltransistors.com/images/us.png)
![NCE60P09AS](https://alltransistors.com/images/es.png)
![NCE60P09AS](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C