NCE60P09AS Specs and Replacement

Type Designator: NCE60P09AS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 124.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP8

NCE60P09AS substitution

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NCE60P09AS datasheet

 ..1. Size:288K  ncepower
nce60p09as.pdf pdf_icon

NCE60P09AS

NCE60P09AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON) ... See More ⇒

 6.1. Size:285K  ncepower
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NCE60P09AS

NCE60P09S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON) ... See More ⇒

 6.2. Size:655K  ncepower
nce60p09k.pdf pdf_icon

NCE60P09AS

http //www.ncepower.com NCE60P09K NCE P-Channel Enhancement Mode Power MOSFET General Features Description V =-60V,I =-9A DS D The NCE60P09K uses advanced trench technology and design R ... See More ⇒

 7.1. Size:408K  ncepower
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NCE60P09AS

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Detailed specifications: NCE60P03R, NCE60P03Y, NCE60P04SN, NCE60P05BY, NCE60P05N, NCE60P05R, NCE60P07AS, NCE60P08AS, IRF520, NCE60P09K, NCE60P12AS, NCE60P16AQ, NCE60P17AQ, NCE60P18AQ, NCE60P25, NCE60P28AK, NCE60P40F

Keywords - NCE60P09AS MOSFET specs

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