NCE60P18AQ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60P18AQ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 124 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: DFN3.3X3.3-8L

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NCE60P18AQ datasheet

 ..1. Size:624K  ncepower
 nce60p18aq.pdf pdf_icon

NCE60P18AQ

NCE60P18AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -18A DS D The NCE60P18AQ uses advanced trench technology to provide R

 5.1. Size:418K  ncepower
 nce60p18ak.pdf pdf_icon

NCE60P18AQ

 7.1. Size:410K  ncepower
 nce60p16aq.pdf pdf_icon

NCE60P18AQ

http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R

 7.2. Size:424K  ncepower
 nce60p10k.pdf pdf_icon

NCE60P18AQ

Pb Free Product http //www.ncepower.com NCE60P10K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-10A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE60P05R, NCE60P07AS, NCE60P08AS, NCE60P09AS, NCE60P09K, NCE60P12AS, NCE60P16AQ, NCE60P17AQ, 8N60, NCE60P25, NCE60P28AK, NCE60P40F, NCE60P45AK, NCE60P50G, NCE60P65K, NCE60P70D, NCE60P70G