NCE60P28AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60P28AK

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 90.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO-252

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NCE60P28AK datasheet

 ..1. Size:383K  ncepower
nce60p28ak.pdf pdf_icon

NCE60P28AK

NCE60P28AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)

 7.1. Size:347K  ncepower
nce60p20k.pdf pdf_icon

NCE60P28AK

http //www.ncepower.com NCE60P20K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

 7.2. Size:358K  ncepower
nce60p25.pdf pdf_icon

NCE60P28AK

Pb Free Product http //www.ncepower.com NCE60P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.3. Size:397K  ncepower
nce60p25k.pdf pdf_icon

NCE60P28AK

Pb Free Product http //www.ncepower.com NCE60P25K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

Otros transistores... NCE60P08AS, NCE60P09AS, NCE60P09K, NCE60P12AS, NCE60P16AQ, NCE60P17AQ, NCE60P18AQ, NCE60P25, 75N75, NCE60P40F, NCE60P45AK, NCE60P50G, NCE60P65K, NCE60P70D, NCE60P70G, NCE60P82A, NCE60P82AD