NCE60P28AK - аналоги и даташиты транзистора

 

NCE60P28AK - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE60P28AK
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 90.6 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для NCE60P28AK

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60P28AK Datasheet (PDF)

 ..1. Size:383K  ncepower
 nce60p28ak.pdf pdf_icon

NCE60P28AK

NCE60P28AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)

 7.1. Size:347K  ncepower
 nce60p20k.pdf pdf_icon

NCE60P28AK

http://www.ncepower.com NCE60P20KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

 7.2. Size:358K  ncepower
 nce60p25.pdf pdf_icon

NCE60P28AK

Pb Free Producthttp://www.ncepower.com NCE60P25NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.3. Size:397K  ncepower
 nce60p25k.pdf pdf_icon

NCE60P28AK

Pb Free Producthttp://www.ncepower.com NCE60P25KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60P08AS , NCE60P09AS , NCE60P09K , NCE60P12AS , NCE60P16AQ , NCE60P17AQ , NCE60P18AQ , NCE60P25 , 75N75 , NCE60P40F , NCE60P45AK , NCE60P50G , NCE60P65K , NCE60P70D , NCE60P70G , NCE60P82A , NCE60P82AD .

History: PMPB15XP | JCS86N25WT | NCE60P65K | PMPB15XN

 

 
Back to Top

 


 
.