FQA8N90CF109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQA8N90CF109 Datasheet (PDF)

6.1. Size:807K fairchild semi
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November 2007 QFETFQA8N90C_F109900V N-Channel MOSFETFeatures Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to

6.2. Size:690K fairchild semi
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TMQFETFQA8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fast s

6.3. Size:1275K onsemi
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FQA8N90C-F109 N-Channel QFET MOSFETDescription900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 Vstripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

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