FQA8N90CF109 Specs and Replacement
Type Designator: FQA8N90CF109
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO3PN
FQA8N90CF109 substitution
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FQA8N90CF109 datasheet
fqa8n90c f109.pdf
November 2007 QFET FQA8N90C_F109 900V N-Channel MOSFET Features Description 8A, 900V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 35 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to... See More ⇒
fqa8n90c.pdf
TM QFET FQA8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast s... See More ⇒
fqa8n90c-f109.pdf
FQA8N90C-F109 N-Channel QFET MOSFET Description 900 V, 8 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 8 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 4 V stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3... See More ⇒
Detailed specifications: SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65, FQA70N15, FQA7N80CF109, SDF04N60, FQA8N100C, AO3400A, FQA90N08, FQA90N15, FQA90N15F109, FQA9N90F109, FQA9N90CF109, FQA9P25, FQAF11N90C, FQAF13N80
Keywords - FQA8N90CF109 MOSFET specs
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History: AP3P7R0EMT | PSMN5R0-100XS | JMPF25N50BJ
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