NCE60T2K2I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60T2K2I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 21 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Paquete / Cubierta: TO-251
NCE60T2K2I Datasheet (PDF)
nce60t2k2i.pdf

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60t2k2i nce60t2k2k.pdf

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60t2k2k.pdf

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce60td65bt.pdf

PbFreeProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral Description:Using NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Otros transistores... NCE60P50G , NCE60P65K , NCE60P70D , NCE60P70G , NCE60P82A , NCE60P82AD , NCE60P82AK , NCE60PD05S , 8N60 , NCE60T2K2K , NCE6525Q , NCE65N180 , NCE65N180D , NCE65N180F , NCE65N180K , NCE65N180T , NCE65N180V .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTQ080P03A | JMTQ075N03D | JMTQ062N04A | JMTQ055N04A | JMTQ050N02A | JMTQ040N03A | JMTQ025N02A | JMTP11DN10A | JMTP110N06D | JMTP110N06A | JMTP085P02A | JMTP080P03A | JMTP080N04D | JMTP080N04A | JMTP075N06A | JMTP045N03A
Popular searches
2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet