All MOSFET. NCE60T2K2I Datasheet

 

NCE60T2K2I Datasheet and Replacement


   Type Designator: NCE60T2K2I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.5 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-251
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NCE60T2K2I Datasheet (PDF)

 ..1. Size:457K  ncepower
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NCE60T2K2I

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:457K  ncepower
nce60t2k2i nce60t2k2k.pdf pdf_icon

NCE60T2K2I

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:457K  ncepower
nce60t2k2k.pdf pdf_icon

NCE60T2K2I

NCE60T2K2INCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 8.1. Size:1652K  1
nce60td65bt.pdf pdf_icon

NCE60T2K2I

PbFreeProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral Description:Using NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KIA7N60H-262 | CJP01N65B | SI4404DY | UF830 | 25P10G | BSC016N06NS | AONR36329

Keywords - NCE60T2K2I MOSFET datasheet

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