NCE60T2K2I Specs and Replacement

Type Designator: NCE60T2K2I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-251

NCE60T2K2I substitution

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NCE60T2K2I datasheet

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NCE60T2K2I

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 ..2. Size:457K  ncepower
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NCE60T2K2I

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 5.1. Size:457K  ncepower
 nce60t2k2k.pdf pdf_icon

NCE60T2K2I

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 8.1. Size:1652K  1
 nce60td65bt.pdf pdf_icon

NCE60T2K2I

PbFreeProduct NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒

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Detailed specifications: NCE60P50G, NCE60P65K, NCE60P70D, NCE60P70G, NCE60P82A, NCE60P82AD, NCE60P82AK, NCE60PD05S, IRFB7545, NCE60T2K2K, NCE6525Q, NCE65N180, NCE65N180D, NCE65N180F, NCE65N180K, NCE65N180T, NCE65N180V

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