NCE65N180D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N180D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 194 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-263

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NCE65N180D datasheet

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NCE65N180D

NCE65N180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

 5.1. Size:670K  ncepower
 nce65n180.pdf pdf_icon

NCE65N180D

NCE65N180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industrial

 5.2. Size:864K  ncepower
 nce65n180t.pdf pdf_icon

NCE65N180D

NCE65N180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

 5.3. Size:717K  ncepower
 nce65n180f.pdf pdf_icon

NCE65N180D

NCE65N180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 160 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 20 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 28.5 nC power conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE60P82A, NCE60P82AD, NCE60P82AK, NCE60PD05S, NCE60T2K2I, NCE60T2K2K, NCE6525Q, NCE65N180, RU7088R, NCE65N180F, NCE65N180K, NCE65N180T, NCE65N180V, NCE65N1K2D, NCE65N1K2F, NCE65N1K2I, NCE65N1K2K