NCE65N180D Todos los transistores

 

NCE65N180D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N180D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 194 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-263
 

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NCE65N180D Datasheet (PDF)

 ..1. Size:725K  ncepower
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NCE65N180D

NCE65N180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 5.1. Size:670K  ncepower
 nce65n180.pdf pdf_icon

NCE65N180D

NCE65N180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industrial

 5.2. Size:864K  ncepower
 nce65n180t.pdf pdf_icon

NCE65N180D

NCE65N180TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 5.3. Size:717K  ncepower
 nce65n180f.pdf pdf_icon

NCE65N180D

NCE65N180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE60P82A , NCE60P82AD , NCE60P82AK , NCE60PD05S , NCE60T2K2I , NCE60T2K2K , NCE6525Q , NCE65N180 , MMD60R360PRH , NCE65N180F , NCE65N180K , NCE65N180T , NCE65N180V , NCE65N1K2D , NCE65N1K2F , NCE65N1K2I , NCE65N1K2K .

History: P1203EVG | 2N65G-TN3-R | SSM6K407TU | PSMN9R0-30LL | 2SK804 | SI2302ADS-T1 | IRFP4332PBF

 

 
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