Справочник MOSFET. NCE65N180D

 

NCE65N180D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N180D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 194 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-263
     - подбор MOSFET транзистора по параметрам

 

NCE65N180D Datasheet (PDF)

 ..1. Size:725K  ncepower
nce65n180d.pdfpdf_icon

NCE65N180D

NCE65N180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 5.1. Size:670K  ncepower
nce65n180.pdfpdf_icon

NCE65N180D

NCE65N180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industrial

 5.2. Size:864K  ncepower
nce65n180t.pdfpdf_icon

NCE65N180D

NCE65N180TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

 5.3. Size:717K  ncepower
nce65n180f.pdfpdf_icon

NCE65N180D

NCE65N180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 160 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 20 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 28.5 nCpower conversion, and industr

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: PSMN6R5-80PS | UPA1770 | TSM4946DCS | KRF7703 | RU1HL8L | IXTH10N60 | PJU1NA60A

 

 
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